implantation studies on silicon-doped gan

article{osti_654192 title = {Doping of GaN by ion implantation: Does It Work?} author = {Suvkhanov A and Wu W and Price K and Parikh N and Irene E and Hunn J and Thomson D and Davis R F and Krasnobaev L} abstractNote = {Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si{sup +} (for n-type) and 80 keV Mg{sup +} (for p-type 1 Introduction Er implanted in silicon has received a renewed interest after the advent of single-photon-based quantum communications because of its capability to transmit [1 2] and receive [] photons at a wavelength compatible with commercial optical fibers and because of its compatibility with silicon photonics [4 5 6] Er-doped silicon junctions [7 8] and transistors [3 9] have been

The role of open volume defects in Mg

2005-5-2from transmission electron microscopy and photoluminescence studies I INTRODUCTION The p-type doping of the gallium nitride (GaN) is one of the biggest challenges in GaN based device develop-ment The n-type material is easily achieved by donor impurities doping e g by silicon or oxygen Presently the best impurity for p-type doping is

2012-10-20Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2 1017 Si/cm3 to 9 2 1018 Si/cm3 were investigated by means of the perturbed angular correlation (PAC) technique applied to implanted 111In(Cd) An undoped GaN film is used as a reference The Si atoms replace Ga atoms in the lattice and silicon being a group IV

2003-12-151 Introduction Rare earth (RE) doped GaN has been the subject of intense investigation due to its promising luminescence characteristics with emissions that span the visible and infra-red (IR) spectral range Doping has been performed during growth or by ion implantation into GaN films resulting in red (Eu Pr) green (Er) and blue (Tm) luminescence

2020-6-20To fully exploit the advantages of GaN for electronic devices a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the perspective of epitaxial growth By using a novel two-dimensional growth mode benefiting from our high-temperature

2014-8-19Growth and characterization of horizontal GaN wires on silicon Xinbo Zou 1 2 Xing Lu 1 Ryan Lucas 3 Thomas F Kuech 2 3 Jonathan W Choi 4 Padma Gopalan 4 and Kei May Lau1 2 a) 1Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 2HKUST Jockey Club Institute for Advanced Study The Hong

Modulated silicon doping improves GaN

The low conductivity in DBR structures is the result of polarization charges between its layers of aluminum indium nitride (AlInN) and GaN To overcome the effects of polarization charges the researchers used silicon-doped nitrides and introduced modulation doping into the layers of the structure

article{osti_654192 title = {Doping of GaN by ion implantation: Does It Work?} author = {Suvkhanov A and Wu W and Price K and Parikh N and Irene E and Hunn J and Thomson D and Davis R F and Krasnobaev L} abstractNote = {Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si{sup +} (for n-type) and 80 keV Mg{sup +} (for p-type

The effect of an Fe-doped GaN buffer on off-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate[J] IEEE Trans Electron Devices 2006 53(12): 2926 doi: 10 1109/TED 2006 885679 [8] Selvaraj S L Suzue T Egawa T Breakdown enhancement

2014-8-19Growth and characterization of horizontal GaN wires on silicon Xinbo Zou 1 2 Xing Lu 1 Ryan Lucas 3 Thomas F Kuech 2 3 Jonathan W Choi 4 Padma Gopalan 4 and Kei May Lau1 2 a) 1Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 2HKUST Jockey Club Institute for Advanced Study The Hong

2008-5-30The GaN films were deposited on sapphire wafers using metal-organic chemical vapor deposition (MOCVD) The gallium source was TMGa and silane was used as the source for silicon dopant The carrier gases included ammonia and nitrogen The films are approximately 2 m thick and doped uniformly throughout with silicon at a level of 1 8x1018 cm-

2008-5-30The GaN films were deposited on sapphire wafers using metal-organic chemical vapor deposition (MOCVD) The gallium source was TMGa and silane was used as the source for silicon dopant The carrier gases included ammonia and nitrogen The films are approximately 2 m thick and doped uniformly throughout with silicon at a level of 1 8x1018 cm-

The addition of oxygen in RE doped Si and GaAs was found to be critical to its operation 25 26 27 28 29 however in studies on O and Er co-implanted GaN some groups report a positive influence of adding oxygen 27 30 31 while others reported no effect 32 33 or even a negative impact 34 35

2014-12-12early studies of such implant doping and post annealing they found that implantation will result in a highly resistive area In 1995 another group used H He and N for GaN implant isolation [3] And the resistivity remained high even after post annealing for He and N implantation As a result ion implantation can be used for isolation of GaN

Implantation studies on silicon

Implantation studies on silicon-doped GaN By R Simon R Vianden and K Khler Cite BibTex Full citation Abstract Silicon-doped GaN layers grown by low-pressure metalorganic vapor-phase epitaxy with Si concentrations ranging from 2 x 10(17) Si/cm(3) to 9 2 x 10(18) Si/cm(3) were investigated by means of the perturbed angular

2007-5-29are needed for fabrication of GaN based electronic devices such as high electron mobility transistors [3 4] Therefore determination of the optimized conditions for implantation and annealing of GaN is necessary in order to minimize the induced damage For the as-implanted GaN early studies [5{7] have reported on some typical features: pla-

2018-11-15Some studies emphasize the role of nitrogen on regulating the concentration of nitrogen vacancies to enhance its physical characteristics and electric behaviors The nitrogen ions and the doped transition metal atoms tend to cluster together which induces the large spin split acceptor in transition metal doped ZnO and TiO 2 etc

A new way to improve the quality and reproducibility of GaN film in hydride vapor phase epitaxy (HVPE) system is reported by introducing the additional HCl to the growth surface in the initial step of nucleation In addition substrate nitridation is often used in the

2020-3-13Therefore the present experimental results concerning the defect evolution in Mg-implanted GaN can be explained by these previous studies on the migration of point defects in GaN The IDs with Mg segregation in sample 1 (annealed at 1573 K) were

2014-12-12early studies of such implant doping and post annealing they found that implantation will result in a highly resistive area In 1995 another group used H He and N for GaN implant isolation [3] And the resistivity remained high even after post annealing for He and N implantation As a result ion implantation can be used for isolation of GaN

2018-12-11Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications This study reports comparative structural analysis of defects in GaN layers on freestanding GaN substrates where Mg incorporation is carried out via two approaches: ion implantation and epitaxial doping